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Freescale Semiconductor Technical Data
Document Number: MW7IC3825N Rev. 0, 11/2008
RF LDMOS Wideband Integrated Power Amplifiers
The MW7IC3825N wideband integrated circuit is designed with on - chip matching that makes it usable from 3400 - 3600 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. * Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 130 mA, IDQ2 = 230 mA, Pout = 5 Watts Avg., f = 3600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain -- 25 dB Power Added Efficiency -- 15% Device Output Signal PAR -- 8.5 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset -- - 48 dBc in 1 MHz Channel Bandwidth Driver Applications * Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 190 mA, IDQ2 = 230 mA, Pout = 0.5 Watts Avg., f = 3400 and 3600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain -- 23.5 dB Power Added Efficiency -- 3.5% Device Output Signal PAR -- 9.2 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset -- - 55 dBc in 1 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 25 Watts CW Output Power * Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 0 to 44 dBm CW Pout * Typical Pout @ 1 dB Compression Point ] 30 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters * On - Chip Matching (50 Ohm Input, DC Blocked) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
3400 - 3600 MHz, 5 W AVG., 28 V WiMAX RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
CASE 1886 - 01 TO - 270 WB - 16 PLASTIC MW7IC3825NR1
CASE 1887 - 01 TO - 270 WB - 16 GULL PLASTIC MW7IC3825GNR1
CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW7IC3825NBR1
VDS1 RFin RFout/VDS2
GND VDS1 VGS2 VGS1 NC RFin NC VGS1 VGS2 VDS1 GND
1 2 3 4 5 6 7 8 9 10 11
16 15
GND NC
14
RFout/VDS2
VGS1 VGS2
Quiescent Current Temperature Compensation (1)
13 12
NC GND
(Top View) Note: Exposed backside of the package is the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.Select Documentation/Application Notes - AN1977 or AN1987.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Input Power Symbol VDS VGS VDD Tstg TC TJ Pin Characteristic Thermal Resistance, Junction to Case WiMAX Application (Case Temperature 71C, Pout = 5 W CW) Stage 1, 28 Vdc, IDQ1 = 130 mA Stage 2, 28 Vdc, IDQ2 = 230 mA Symbol RJC 4.7 1.3 Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 45 Value (2,3) Unit Vdc Vdc Vdc C C C dBm
Table 2. Thermal Characteristics
Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C Max 10 1 1 Unit Adc Adc Adc
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Stage 1 - Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 - On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 25 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1 = 130 mA) Fixture Gate Quiescent Voltage (4) (VDD = 28 Vdc, IDQ1 = 130 mA, Measured in Functional Test) VGS(th) VGS(Q) VGG(Q) 1.2 -- 3.5 2 2.7 4.2 2.7 -- 5 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- Symbol Min Typ
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 4. VGG = 1.55 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. (continued)
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Stage 2 - Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 - On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 120 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2 = 230 mA) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, IDQ2 = 230 mA, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Stage 2 - Dynamic Characteristics (2) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss -- 72.3 -- pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 -- 2.5 0.2 2 2.7 3.3 0.5 2.7 -- 4 1.2 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA, Pout = 5 W Avg., f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps PAE PAR ACPR IRL 21 12 7.5 -- -- 25 15 8.5 - 48 - 12 32 -- -- - 45 -6 dB % dB dBc dB
Typical Performances OFDM Signal - 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA, Pout = 5 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Relative Constellation Error (4) Error Vector Magnitude
(4)
RCE EVM
-- --
- 33 2.2
-- --
dB % rms
1. VGG = 1.22 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. 3. Measurement made with device in straight lead configuration before any lead forming operation is applied. 4. RCE = 20Log(EVM/100). (continued)
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 3
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 2 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 200 MHz Bandwidth @ Pout = 5 W Avg. Average Deviation from Linear Phase in 200 MHz Bandwidth @ Pout = 25 W CW Average Group Delay @ Pout = 25 W CW, f = 3500 MHz Part - to - Part Insertion Phase Variation @ Pout = 25 W CW, f = 3500 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol P1dB IMDsym Min -- -- Typ 30 83 Max -- -- Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA, 3400-3600 MHz Bandwidth
VBWres GF Delay G P1dB
-- -- -- -- -- -- --
90 0.7 3.15 3.21 13.88 0.046 0.015
-- -- -- -- -- -- --
MHz dB ns dB/C dBm/C
Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 190 mA, IDQ2 = 230 mA, Pout = 0.5 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset. Power Gain Power Added Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps PAE PAR ACPR IRL -- -- -- -- -- 23.5 3.5 9.2 - 55 - 12 -- -- -- -- -- dB % dB dBc dB
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 4 RF Device Data Freescale Semiconductor
VD1 C1 C5
RF INPUT
C6 Z1 Z2 Z4 Z3 Z6 Z5 Z8 Z7 Z10 Z9 Z12 Z11 C15 VG1 VG2 R2 C16 R1 C14 C7 C17 Z13
1 2 3 4 5 6
NC VGS2 VGS1 NC
DUT
16 NC 15
14 7 NC 8 9 10 VD1 11
Quiescent Current Temperature Compensation
NC 13 12
C13
C9 VD2 +
C4 Z42 Z41
C3
C2
C12 Z26 Z25
Z14
Z40 Z15 Z16 Z17 Z18 Z19 Z43
Z20 Z21
Z23 Z22
Z24 Z28 Z29 Z27 C8
Z30
Z31 Z33 Z32
Z36 Z34 Z35
RF Z37 OUTPUT Z38 Z39
Z44 Z45 C11 R3
C10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 0.118 x 0.044 Microstrip 0.205 x 0.044 Microstrip 0.083 x 0.096 Microstrip 0.195 x 0.044 Microstrip 0.094 x 0.132 Microstrip 0.509 x 0.044 Microstrip 0.083 x 0.091 Microstrip 0.372 x 0.044 Microstrip 0.078 x 0.192 Microstrip 0.078 x 0.044 Microstrip 0.079 x 0.141 Microstrip 0.243 x 0.044 Microstrip 0.605 x 0.044 Microstrip 0.232 x 0.340 Microstrip 0.042 x 0.340 Microstrip 0.112 x 0.150 Microstrip Z17 Z18 Z19 Z20 Z21 Z22 Z23 Z24 Z25 Z26 Z27 Z28 Z29 Z30 Z31 0.230 0.125 0.228 0.076 0.289 0.083 0.375 0.185 0.079 0.185 0.185 0.093 0.063 0.103 0.080
x 0.090 Microstrip x 0.125 Microstrip x 0.100 Microstrip x 0.165 Microstrip x 0.100 Microstrip x 0.110 Microstrip x 0.100 Microstrip x 0.080 Microstrip x 0.020 Microstrip x 0.020 Microstrip x 0.100 Microstrip x 0.100 Microstrip x 0.044 Microstrip x 0.044 Microstrip x 0.121 Microstrip
Z32 Z33 Z34 Z35 Z36 Z37 Z38 Z39 Z40 Z41 Z42 Z43 Z44 Z45 PCB
0.080 x 0.112 Microstrip 0.193 x 0.044 Microstrip 0.080 x 0.051 Microstrip 0.157 x 0.055 Microstrip 0.080 x 0.044 Microstrip 0.080 x 0.131 Microstrip 0.040 x 0.044 Microstrip 0.073 x 0.044 Microstrip 0.574 x 0.044 Microstrip L = 0.305 wi = 0.150 Angle = 130 Microstrip 0.523 x 0.044 Microstrip 0.574 x 0.044 Microstrip L = 0.305 wi = 0.150 Angle = 130 Microstrip 0.523 x 0.044 Microstrip Taconic TLX8 - 0300, 0.020, r = 2.55
Figure 3. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Schematic
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 5
Table 6. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part C1, C13, C14 C2, C3 C4, C5, C9, C10 C6, C7 C8 C11 C12 C15, C16 C17 R1, R2 R3 Description 2.2 F, 50 V Chip Capacitors 10 F, 50 V Chip Capacitors 2.2 pF Chip Capacitors 0.5 pF Chip Capacitors 2 pF Chip Capacitor 33 pF Chip Capacitor 220 F, 63 V Electrolytic Capacitor 4.7 F, 50 V Chip Capacitors 0.3 pF Chip Capacitor 1 k, 1/8 W Chip Resistors 10 , 1/4 W Chip Resistor Part Number C3225X7R1H225M C5750X5R1H106M ATC100B2R2BT500XT ATC100B0R5BT500XT ATC100B2R0BT500XT ATC100B330JT500XT 222213668221 C4532X5R1H475M ATC100B0R3BT500XT CRCW08051001FKEA CRCW120610R0FKEA Manufacturer TDK TDK ATC ATC ATC ATC BC Components TDK ATC Vishay Vishay
VD1
VD2 C12 C2
MW7IC3825N/NB Rev. 7 C4 C1 C5 CUT OUT AREA C3
C6
C7 C17 C9 C13 C15 C14 R1
C8
C10
VG1 R2 VG2 C16 VD1 R3 C11
Figure 4. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Component Layout
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 25.2 25 24.8 Gps, POWER GAIN (dB) 24.6 24.4 24.2 24 23.8 23.6 23.4 23.2 3400 3425 3450 3475 3500 3525 3550 3575 IRL ACPR PARC Gps 18 VDD = 28 Vdc, Pout = 5 W (Avg.), IDQ1 = 130 mA, IDQ2 = 230 mA 17 OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 16 hD 15 14 -44 -45 ACPR (dBc) -46 -47 -48 -49 3600 IRL, INPUT RETURN LOSS (dB) -7 -8 -9 -10 -11 -12 0 -0.5 -1 -1.5 -2 -2.5 PARC (dB) PARC (dB)
f, FREQUENCY (MHz)
Figure 5. WiMAX Broadband Performance @ Pout = 5 Watts Avg.
4 VDD = 28 Vdc, Pout = 20 dBm (Avg.), IDQ1 = 130 mA, IDQ2 = 230 mA 3 OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth 2 Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 1 Gps hD PARC 0 -54 -55 IRL ACPR -56 -57 -58 3425 3450 3475 3500 3525 3550 3575 -59 3600 ACPR (dBc) -7 -8 -9 -10 -11 -12 D, DRAIN EFFICIENCY (%) 25.6 25.4 25.2 Gps, POWER GAIN (dB) 25 24.8 24.6 24.4 24.2 24 23.8 23.6 3400
IRL, INPUT RETURN LOSS (dB)
-0 -0.5 -1 -1.5 -2 -2.5
f, FREQUENCY (MHz)
Figure 6. WiMAX Broadband Performance @ Pout = 20 dBm Avg.
26 25 Gps, POWER GAIN (dB) 24 230 mA 23 22 110 mA 21 20 1 10 Pout, OUTPUT POWER (WATTS) CW 100 175 mA IDQ2 = 350 mA 290 mA VDD = 28 Vdc IDQ1 = 130 mA f = 3500 MHz Gps, POWER GAIN (dB) 26 IDQ1 = 195 mA 25 160 mA 24 130 mA 23 100 mA 22 21 20 1 10 Pout, OUTPUT POWER (WATTS) CW 100 70 mA VDD = 28 Vdc IDQ2 = 230 mA f = 3500 MHz
Figure 7. Power Gain versus Output Power @ IDQ1 = 130 mA
Figure 8. Power Gain versus Output Power @ IDQ2 = 230 mA
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) -10 VDD = 28 Vdc, Pout = 2 W (PEP), IDQ1 = 130 mA IDQ2 = 230 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 3500 MHz
-20
IM3-L -30 IM3-U IM5-L -40 IM5-U -50 IM7-U IM7-L -60 0.1
1
10
100
TWO-TONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products versus Tone Spacing
PARC 25 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 24.5 Gps, POWER GAIN (dB) 24 23.5 23 22.5 22 1 0 PARC -1 -2 -3 -4 -5 1 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 5 9 13 17 21 -1 dB = 6 W -2 dB = 8.5 W -3 dB = 11.5 W 20 15 10 D ACPR 25 30 Gps 40 VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA f = 3500 MHz, OFDM 802.16d 35 64 QAM 3/4, 4 Bursts -20 -25 -30 -35 -40 -45 -50 ACPR (dBc)
Pout, OUTPUT POWER (WATTS)
Figure 10. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 60 VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA f = 3500 MHz, OFDM 802.16d, 64 QAM 3/4 50 4 Bursts, 10 MHz Channel Bandwidth 25_C Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 40 85_C 30 20 10 ACPR 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. WiMAX -50 100 Gps TC = -30_C -20 -25 -30_C -30 -35 -40 -45 ACPR (dBc)
-30_C 25_C D 85_C
25_C
85_C
Figure 11. WiMAX, ACPR, Power Gain and Drain Efficiency versus Output Power
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 8 RF Device Data Freescale Semiconductor
D, DRAIN EFFICIENCY (%)
TYPICAL CHARACTERISTICS
30 25 20 15 10 S21 (dB) 5 0 -5 -10 -15 -20 -25 2400 2600 2800 3000 3200 VDD = 28 Vdc IDQ1 = 130 mA, IDQ2 = 230 mA 3400 3600 3800 S11 S21 15 10 5 0 MTTF (HOURS) -5 -10 -15 -20 -25 -30 -35 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 5 W Avg., and PAE = 15%. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 105 S11 (dB) 107 108 2nd Stage 109
106
1st Stage
-40 4000 4200
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
Figure 13. MTTF versus Junction Temperature
WIMAX TEST SIGNAL
100 10 Input Signal PROBABILITY (%) 1 0.1 (dB) -50 -60 -70 8 10 -80 -90 -20 ACPR in 1 MHz Integrated BW -15 -10 -5 0 ACPR in 1 MHz Integrated BW 5 10 15 20 0.01 0.001 0.0001 0 OFDM 802.16d, 64 QAM 3/4, 4 Bursts 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 2 4 6 -10 -20 -30 -40 10 MHz Channel BW
PEAK-TO-AVERAGE (dB)
Figure 14. OFDM 802.16d Test Signal
f, FREQUENCY (MHz)
Figure 15. WiMAX Spectrum Mask Specifications
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 9
Zo = 50
f = 3600 MHz
Zload
f = 3400 MHz
f = 3400 MHz f = 3600 MHz Zsource
VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA, Pout = 5 W Avg. f MHz 3400 3425 3450 3475 3500 3525 3550 3575 3600 Zsource W 31.82 - j19.29 32.86 - j19.70 33.95 - j20.93 35.11 - j22.97 36.33 - j25.82 37.61 - j29.49 38.95 - j33.97 40.35 - j39.26 41.81 - j45.37 Zload W 4.58 - j7.62 4.42 - j7.33 4.22 - j7.20 4.13 - j7.22 4.13 - j7.26 4.07 - j7.20 3.81 - j6.99 3.48 - j6.77 3.21 - j6.72
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 10 RF Device Data Freescale Semiconductor
Table 7. Common Source S - Parameters (VDD = 28 V, IDQ1 = 130 mA, IDQ2 = 230 mA, TC = 25C, 50 Ohm System)
f MHz 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900 3950 4000 S11 |S11| 0.260 0.177 0.139 0.117 0.190 0.283 0.395 0.493 0.575 0.603 0.537 0.479 0.458 0.465 0.427 0.429 0.407 0.395 0.388 0.384 0.389 - 47.0 - 63.4 - 68.0 - 59.6 - 61.1 - 85.6 - 118.0 - 155.0 166.0 126.0 82.8 56.7 29.8 1.3 - 27.1 - 53.0 - 81.6 - 110.0 - 139.0 - 167.0 165.0 |S21| 7.550 8.610 10.000 11.300 13.600 16.800 19.900 22.300 24.000 23.800 19.900 15.600 12.900 11.200 9.830 8.600 7.770 7.020 6.380 5.900 5.460 S21 - 61.6 - 102.0 - 143.0 177.0 139.0 95.7 49.1 0.9 - 48.3 - 99.4 - 155.0 165.0 128.0 94.1 58.3 25.7 - 7.2 - 39.8 - 71.8 - 104.0 - 135.0 |S12| 0.00485 0.00423 0.00424 0.00293 0.00322 0.00533 0.00762 0.00950 0.0116 0.0132 0.0135 0.00994 0.00810 0.00680 0.00636 0.00546 0.00476 0.00445 0.00421 0.00454 0.00531 S12 - 43.9 - 72.7 - 98.1 - 122.0 - 98.2 - 118.0 - 146.0 - 178.0 148.0 111.0 58.2 27.0 1.1 - 19.7 - 42.4 - 65.7 - 82.1 - 97.7 - 113.0 - 126.0 - 145.0 |S22| 0.724 0.713 0.675 0.612 0.627 0.629 0.547 0.421 0.235 0.053 0.409 0.509 0.585 0.637 0.672 0.707 0.730 0.752 0.761 0.779 0.779 S22 - 87.7 - 113.0 - 141.0 - 166.0 171.0 138.0 102.0 65.9 23.1 - 130.0 124.0 80.6 49.7 21.3 - 4.3 - 28.9 - 53.8 - 77.2 - 102.0 - 125.0 - 150.0
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 11
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
53 52 Pout, OUTPUT POWER (dBm) 51 50 49 48 47 46 45 44 43 16 17 18 19 VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA Pulsed CW, 10 sec(on), 10% Duty Cycle f = 3400 MHz 20 21 22 23 24 25 26 27 28 Actual P1dB = 46.66 dBm (46.3 W) Ideal P3dB = 47.45 dBm (55.6 W) Pout, OUTPUT POWER (dBm) 53 52 51 50 49 48 47 46 45 44 43 18 19 20 21 VDD = 28 Vdc, IDQ1 = 130 mA, IDQ2 = 230 mA Pulsed CW, 10 sec(on), 10% Duty Cycle f = 3600 MHz 22 23 24 25 26 27 28 29 30 Actual P1dB = 46.13 dBm (41.0 W) P3dB = 47.11 dBm (51.5 W) Ideal
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource P1dB 52.4 - j42.5 Zload
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource P1dB 126.6 - j41.9 Zload
3.5 - j8.5
3.3 - j8.3
Figure 17. Pulsed CW Output Power versus Input Power @ 28 V @ 3400 MHz
Figure 18. Pulsed CW Output Power versus Input Power @ 28 V @ 3600 MHz
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 12 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 13
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 14 RF Device Data Freescale Semiconductor
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MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 16 RF Device Data Freescale Semiconductor
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 17
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 18 RF Device Data Freescale Semiconductor
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MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 RF Device Data Freescale Semiconductor 21
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family * AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family * AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Nov. 2008 * Initial Release of Data Sheet Description
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1 22 RF Device Data Freescale Semiconductor
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MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
Document Number: RF Device Data MW7IC3825N Rev. 0, 11/2008 Freescale Semiconductor
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